New cathodoluminescence application note on bulk and nanostructured Gallium Nitride-based LED materials

August 21, 2017

We have just published our latest application note on using cathodoluminescence to study bulk and nanostructured Gallium Nitride-based LED materials. Gallium Nitride (GaN) is a versatile wide-bandgap semiconductor material with exceptional optical and electrical properties. As such, it is used in a wide variety of applications including LEDs for lighting and displays, laser diodes, and high-performance electronics.

Cathodoluminescence (CL) imaging and spectroscopy is used extensively to study GaN materials and devices. The energetic electron beam can efficiently excite the wide band gap of GaN with subwavelength spatial resolution, and can image local defects such as dislocations and probe light emission characteristics on small length scales. As LED devices become increasingly miniaturized, cathodoluminescence serves as the most important tool for examining them at the nanoscale. 

If you want to learn more, we invite you to download the application note below. Our resources page also presents a wide variety of resources related to microscopy methods in a broad range of scientific fields.