The paper studies the newly developed “Russian Doll”‐type InGaN/AlGaN quantum wells (QWs). The experiments done by the authors quantitatively characterize the structural properties of these new nanorod structures.

There is a growing need for more efficient semiconductor devices with full-spectrum RGB light emission, particularly those that produce light emission in the green region, which is essential for visible light communication and high-density optical information storage. The elemental composition as well as the structural configurations are important for modulating the light emission wavelengths of the nanorods. For instance, radial heterostructures reduce polarization fields, but are difficult to develop. Therefore, the authors stress the importance of exploring novel structure design strategies for the ternary III-N based nanorod (NR) heterostructures. 

In the paper, the researchers propose a new 3D design for the quantum heterostructures by selective-area molecular-beam epitaxy method. These “Russian Doll”-type InGaN/AlGaN QWs structures were characterised with scanning transmission electron microscopy (STEM) and atom probe tomography (APT). Further, the optical properties were studied with cathodoluminescence (CL) spectroscopy. The new heterostructures achieve green light emission. 

The described approach, which combines innovative characterization and analysis of nano-optical-devices, can further contribute to the design and performance improvement of new structures of light-emitting diodes. 

The full text of the article can be accessed here: Nanoscale Structural and Emission Properties within “Russian Doll”-Type InGaN/AlGaN Quantum Wells.